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Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

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Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Auteurs : RBID : Pascal:03-0122995

Descripteurs français

Pascal (Inist)
- 7867D, 4255P, 7845, 7867P, 7866F, 8107S, 8535B, 7321C, 7321F, 7847, 6150N, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Superréseau semiconducteur, Laser puits quantique, Emission stimulée, Technique optique grande vitesse, Stoechiométrie, Recombinaison électron trou, Etat interface.

English descriptors

KwdEn :
- Electron-hole recombination, Experimental study, Gallium compounds, High-speed optical techniques, III-V semiconductors, Indium compounds, Interface states, Quantum well lasers, Semiconductor quantum wells, Semiconductor superlattices, Stimulated emission, Stoichiometry, Wide band gap semiconductors.

Abstract

Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different QW In compositions x. SE threshold energy densities (I_th) increased with increasing x-dependent QW depth. Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I_th on x. Carriers are captured from the barriers to the QWs in <1 ps, while carrier recombination rates increased with increasing x. For excitation above I_th, an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I_th. © 2003 American Institute of Physics.

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Pascal:03-0122995

Le document en format XML

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<author><name sortKey="Ozgur, Umit" uniqKey="Ozgur U">Umit Ozgur</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Duke University, Durham, North Carolina 27708</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Caroline du Nord</region>
</placeName>
<wicri:cityArea>Department of Physics, Duke University, Durham</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Everitt, Henry O" uniqKey="Everitt H">Henry O. Everitt</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Duke University, Durham, North Carolina 27708</s1>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Caroline du Nord</region>
</placeName>
<wicri:cityArea>Department of Physics, Duke University, Durham</wicri:cityArea>
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</author>
<author><name sortKey="Keller, Stacia" uniqKey="Keller S">Stacia Keller</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Materials Science, University of California, Santa Barbara, California 93106</s1>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering and Materials Science, University of California, Santa Barbara</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Denbaars, Steven P" uniqKey="Denbaars S">Steven P. Denbaars</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering and Materials Science, University of California, Santa Barbara, California 93106</s1>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
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<wicri:cityArea>Department of Electrical Engineering and Materials Science, University of California, Santa Barbara</wicri:cityArea>
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<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Interface states</term>
<term>Quantum well lasers</term>
<term>Semiconductor quantum wells</term>
<term>Semiconductor superlattices</term>
<term>Stimulated emission</term>
<term>Stoichiometry</term>
<term>Wide band gap semiconductors</term>
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<front><div type="abstract" xml:lang="en">Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different QW In compositions x. SE threshold energy densities (I<sub>th</sub>
) increased with increasing x-dependent QW depth. Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I<sub>th</sub>
 on x. Carriers are captured from the barriers to the QWs in <1 ps, while carrier recombination rates increased with increasing x. For excitation above I<sub>th</sub>
, an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I<sub>th</sub>
. © 2003 American Institute of Physics.</div>
</front>
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<fC01 i1="01" l="ENG"><s0>Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different QW In compositions x. SE threshold energy densities (I<sub>th</sub>
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 on x. Carriers are captured from the barriers to the QWs in <1 ps, while carrier recombination rates increased with increasing x. For excitation above I<sub>th</sub>
, an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I<sub>th</sub>
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Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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Pour mettre un lien sur cette page dans le réseau Wicri